Synthesis and characterization of monodispersed β-Ga2O3 nanospheres via morphology controlled Ga4(OH)10SO4 precursors

To our best knowledge, monodispersed β-Ga2O3 nanospheres were successfully synthesized for first time via morphology controlled Gallium precursors using the forced hydrolysis method, followed by thermal calcination processes. The morphology and particle sizes of the gallium precursors were strongly dependent on the varying (R = SO42-/NO3-) concentration ratios. As R decreased, the size of the prepared gallium precursors decreased and morphology was altered from sphere to rod. The synthesized S2 (R = 0.33) consists of uniform and monodispersed amorphous nanospheres with diameters of about 200 nm. The monodispersed β-Ga2O3 nanospheres were synthesized using thermal calcination processes at various temperatures ranging from 500 to 1000 °C. Monodispersed β-Ga2O3 nanospheres (200 nm) consist of small particles of approximately 10 ~ 20 nm with rough surface at 1000 °C for 1 hour. The UV (375 nm) and broad blue (400 ~ 450 nm) emission indicate recombination via a self-trapped exciton and the defect band emission. Our approach described here is to show the exploration of β-Ga2O3 nanospheres as an atomically dispersion, three-dimensional support for fabrication of hierarchical materials, which is potentially important for a broad range of optoelectronic applications.