Publication
Journal of Vacuum Science & Technology B
Polyakov, A. Y.; Yakimov, E. B.; Smirnov, N. B.; Govorkov, A. V.; Usikov, A. S.; Helava, H.; Makarov, Y. N.; Lee, I. H.
Schottky diodes fabricated on undoped n-GaN films grown by hydride vapor phase epitaxyshowed more than two orders of magnitude higher reverse current if the films contained open core defects.