Kociak, M,; Stéphan, O.; Gloter, A.; Zagonel, L. F.; Tizei, L. H. G.; Tencé, M.; March, K.; Blazit, J. D.; Mahfoud, Z.; Losquin, A.; Meuret, S.; Colliex, C.
Spindle shaped tetragonal La2(MoO4)3: Eu3+ phosphors were synthesized by a polyol mediated solvothermal synthesis method. Growth mechanism for the formation of spindles was explained by increasing the reaction temperature.
Ng, A.; Poplawsky, J. D.; Li, C.; Pennycook, S. J.; Rosenthal, S. J.
Scanning electron microscopy (SEM) electron beam-induced current (EBIC) studies were performed on the cross-section of a nanocrystal-based hybrid bulk heterojunction photovoltaic device.
Polyakov, A. Y.; Yakimov, E. B.; Smirnov, N. B.; Govorkov, A. V.; Usikov, A. S.; Helava, H.; Makarov, Y. N.; Lee, I. H.
Schottky diodes fabricated on undoped n-GaN films grown by hydride vapor phase epitaxyshowed more than two orders of magnitude higher reverse current if the films contained open core defects.
Kumar, S.; Tessarek, C.; Sarau, G.; Christiansen, S.; Singh, R.
In this work, we have studied the synthesis of single crystalline self-catalyzed beta gallium oxide (β-Ga2O3) nanostructures by chemical vapor deposition technique.
Usuki, T.; Lan, C. Y.; Tran, T. H.; Pham, T. D.; Wang, K. L.; Shellnutt, G. J.; Chung, S. L.
In-situ zircon U–Pb and Hf isotope analyses were carried out for alkaline silicic magmatic rocks from the Phan Si Pan-Tu Le region in northern Vietnam to constrain their possible sources and to determine their petrogenetic relationship with the Emeishan Large Igneous Province (ELIP), SW China.
The growth of high-quality, large-scale wurtzite-structured aluminum nitride (AlN) nanowires on c-Al2O3substrates using a catalyst-assisted chemical vapor deposition method was investigated.
To our best knowledge, monodispersed β-Ga2O3 nanospheres were successfully synthesized for first time via morphology controlled Gallium precursors using the forced hydrolysis method, followed by thermal calcination processes.
Data on the temperature dependence of the cathodoluminescence intensity in multiple InGaN/GaN quantum-well structures in the temperature range 80–300 K are reported. Unirradiated structures and structures irradiated with electrons with subthreshold energy are studied.