Media image
Data courtesy of Dr. R. Williams, Ohio State University.
a) Dark field STEM image of GaN/AlN heterostructure nanowire with nominally 3 nm thick GaN quantum wells and 4 nm thick AlN barrier layers; GaN is bright in DF image; (b) Cathodoluminescence (CL) spectrum-image acquired from region indicated by green rectangle in (a) with intensity at 491 ±10 nm
