Publication
Nano Letters
Griffiths, J. T.; Zhang, S.; Rouet-Leduc, B.; Fu, W. Y.; Bao, A.; Zhu, D.; Wallis, D. J.; Howkins, A.; Boyd, I.; Stowe, D.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A.
Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers.