Resources

Showing 11-15 of 15

Mili-electron volt energy resolution

Media image
Data courtesy of Dr. G. Fern, ETC, University of Brunel

Cathodoluminescence spectrum of Europium-doped yttrium oxide particle measured with Vulcan system. Europium ion d-to-f interband transitions produce narrow emission lines; excellent energy resolution of Vulcan™ system resolves two spectral peaks with peak-to-peak separation of only 1.6 meV.
Analyzing the active region of a commercial InGaN LED grown on silicon substrate: Correlating luminescence with microstructure

Media image
Sample courtesy of J. Griffiths, University of Cambridge

(a) Dark field STEM image revealing six 3 nm thick InGaN wells; (b) Cathodoluminescence (CL) image of same region (acquired simultaneously) showing up to 20x variation in the luminescence efficiency locally; (c) Overlay of DF and CL STEM images with the position of threading dislocations shown by
Cathodoluminescence and EELS analysis of plasmonic nanoparticles

Media image

Cathodoluminescence (CL) and EELS analysis of gold prism of 250 nm side length.
Cathodoluminescence analysis of plasmonic nanoparticles

Media image

Cathodoluminescence analysis of a gold prism of side length 200 nm.
Cathodoluminescence analysis on GaN/AlN nanowires

Media image
Data courtesy of Dr. R. Williams, Ohio State University.

a) Dark field STEM image of GaN/AlN heterostructure nanowire with nominally 3 nm thick GaN quantum wells and 4 nm thick AlN barrier layers; GaN is bright in DF image; (b) Cathodoluminescence (CL) spectrum-image acquired from region indicated by green rectangle in (a) with intensity at 491 ±10 nm

Mili-electron volt energy resolution

Analyzing the active region of a commercial InGaN LED grown on silicon substrate: Correlating luminescence with microstructure

Cathodoluminescence and EELS analysis of plasmonic nanoparticles

Cathodoluminescence analysis of plasmonic nanoparticles

Cathodoluminescence analysis on GaN/AlN nanowires

Want to enhance your CL results?