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Showing 51-60 of 82

Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping

Publication
Nano Letters
Griffiths, J. T.; Zhang, S.; Rouet-Leduc, B.; Fu, W. Y.; Bao, A.; Zhu, D.; Wallis, D. J.; Howkins, A.; Boyd, I.; Stowe, D.; Kappers, M. J.; Humphreys; C.J.; Oliver, R. A.

Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers.
Transmission electron microscope study of symmetry-related transitions in cubic Y2O3:Tb3+

Publication
Society for Information Display (SID)
den Engelsen, D.; Fern, G. R.; Ireland, T. G.; Harris, P. G.; Silver, J.

In this paper, we describe measurements of the cathodoluminescence of nanosized cubic Y2O3:Tb3+ with a transmission electron microscope. From the CL-spectra we determined the energy flow from excited Tb3+ in a S6 lattice site to Tb3+ in a C2 site.
GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

Publication
Journal of Crystal Growth
Lin, Y.; Leung, B.; Li, Q.; Figiel, J. J.; Wang, G. T.

Ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (1EQ \O(1,¯)02) r-plane sapphire substrates.
Dual-enhancement of photoluminescence and cathodoluminescence in Eu 3+-activated SrMoO 4 phosphors by Na+ doping

Publication
RSC Advances
Du, P.; Yu, J. S.

Eu3+-activated and Eu3+/Na+-coactivated SrMoO4 phosphors were prepared by a conventional high-temperature solid-state reaction method.
Novel divalent europium doped MgAlON transparent ceramic for shortwave ultraviolet erasable windows

Publication
Scripta Materialia
Liu, X.; Wang, H.; Tu, B.; Wang, W.; Fu, Z.

A novel divalent europium ion doped UV erasable MgAlON (Mg0.27Al2.58O3.73N0.27) transparent ceramic in which Eu/Al atom ratio is 0.25% was fabricated by pressureless sintering. The ceramic was highly dense with high transmittance in visible and infrared region and good mechanical properties.
Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices for optoelectronics

Publication
Nanotechnology
Ramírez, J. M.; Wojcik, J.; Berencén, Y.; Ruiz-Caridad, A.; Estradé, S.; Peiró, F.; Mascher, P.; Garrido, B.

Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices were fabricated by means of alternating deposition of 0.7 nm thick Tb-doped SiOxNy layers and of 0.9 nm thick SiO2 barrier layers in an electron-cyclotron-resonance plasma enhanced chemical vapour deposition system with in situ Tb-doping
Structural and optical properties of disc-in-wire InGaN/GaN LEDs

Publication
Nano Letters
Yan, L.; Jahangir, S.; Wight, S. A.; Nikoobakht, B.; Bhattacharya, P.; Millunchick, J. M.

This study examines the role of the microstructure and optical properties of InGaN/GaN nanowire LED structures on Si(111) having different nanowire coverages. Cathodoluminescence (CL) measurements show that all samples exhibit broad emission around the intended energy, 1.95 eV (635 nm).
Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well

Publication
Semiconductors
Vergeles, P. S.; Yakimov, E. B.

Data on the temperature dependence of the cathodoluminescence intensity in multiple InGaN/GaN quantum-well structures in the temperature range 80–300 K are reported. Unirradiated structures and structures irradiated with electrons with subthreshold energy are studied.
Synthesis and characterization of monodispersed β-Ga2O3 nanospheres via morphology controlled Ga4(OH)10SO4 precursors

Publication
Langmuir
Yoon, D. H.

To our best knowledge, monodispersed β-Ga2O3 nanospheres were successfully synthesized for first time via morphology controlled Gallium precursors using the forced hydrolysis method, followed by thermal calcination processes.
Investigation of the growth and properties of single-crystalline aluminum nitride nanowires

Publication
Ceramics International
Wu, H. M.; Peng, Y. W.

The growth of high-quality, large-scale wurtzite-structured aluminum nitride (AlN) nanowires on c-Al2O3substrates using a catalyst-assisted chemical vapor deposition method was investigated.

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